:::
| Name | Chuan-Hsi Liu |
|---|---|
| Office phone number | 02-7749-3515 |
| liuch@ntnu.edu.tw |
| Category | Full-Time |
|---|---|
| Job title | Professor |
| Research expertise | 1.Manufacturing Technology of Integrated Circuits 2.Semiconductor Device Physics and Process 3.Design of Experiments (including ANOVA & Taguchi Method) |
| Research Summary | Prof. Liu received his Ph.D. in Electrical Engineering from Arizona State University, USA, in 1997. He is a Full Professor at Department of Mechatronic Engineering, National Taiwan Normal University. He has published over 100 journal and conference papers and being granted over 20 patents. He has also coauthored a book (in Chinese) entitled Semiconductor Device Physics and Process: Theory & Practice (3rd edition). His current research interests include advanced CMOS technology and its process optimization. Prof. Liu served in the Committee of the IEEE International Electron Devices Meeting (IEDM) in 2003 and 2004. |
| Forum | Forum link |
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- 期刊論文
- 劉傳璽(2019/11)。Integration of ARCS Motivational Model and IT to Enhance Students Learning in the Context of Atayal Culture。Eurasia Journal of Mathematics, Science & Technology Education，15(11)。
- 劉傳璽(2018/06)。Analysis of the Learning Effectiveness of Atayal Culture CPS Spatial Concept Course on Indigenous Students。Eurasia Journal of Mathematics, Science & Technology Education，14(6)。
- 劉傳璽(2018/04)。Effect of contact-etch-stop-layer and Si1-xGex channel mechanical properties on nano-scaled short channel NMOSFETs with dummy gate arrays。Microelectronics Reliability，83(4)。
- 劉傳璽(2017/06)。A Case Study on the Spatial Conceptualization Abilities for Sixth Grade Elementary Students from Urban, Suburban and Remote Schools。Eurasia Journal of Mathematics, Science & Technology Education，13(6)。
- 劉傳璽(2017/01)。Interaction influence of S/D GeSi lattice mismatch and stress gradient of CESL on nano-scaled strained nMOSFETs。Materials Science in Semiconductor Processing，70(1)。
- 劉傳璽(2016/10)。A Case Study of Design and Usability Evaluation of the Collaborative Problem Solving Instructional Platform System。Eurasia Journal of Mathematics, Science & Technology Education，12(10)。
- 劉傳璽(2015/11)。Heat stress exposing performance of deep-nano HK/MG nMOSFETs using DPN or PDA treatment。Microelectronics Reliability，55(11)。
- 劉傳璽(2015/11)。Leakage current mechanism and effect of Y2O3 doped with Zr high-K gate dielectrics。Microelectronics Reliability，55(11)。
- 劉傳璽(2015/04)。The Impacts of Contact Etch Stop Layer Thickness and Gate Height on Channel Stress in Strained N-Metal Oxide Semiconductor Field Effect Transistors。Journal of Nanoscience and Nanotechnology，15(4)。
- 劉傳璽(2015/03)。Structural Optimizations of Silicon Based NMOSFETs with a Sunken STI Pattern by Using a Robust Stress Simulation Methodology。Journal of Nanoscience and Nanotechnology，15(3)。
- 劉傳璽(2015/03)。A Resultant Stress Effect of Contact Etching Stop Layer and Geometrical Designs of Poly Gate on Nanoscaled nMOSFETs with a Si1−xGex Channel。Journal of Nanoscience and Nanotechnology，15(3)。
- 劉傳璽(2014/11)。Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressors。International Journal of Nanotechnology，11。
- 劉傳璽(2014/11)。Simulation-based sensitivity estimation of the geometric effect of poly gates on nanoscale n-type metal-oxide-semiconductor field-effect transistors with silicon–carbon alloy。Thin Solid Films，570。
- 劉傳璽(2014/11)。Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs。International Journal of Nanotechnology，11。
- 劉傳璽(2014/06)。Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO2 gate dielectrics。Journal of Applied Physics，115。
- 劉傳璽(2014/04)。Investigation of consequent process-induced stress for N-type metal oxide semiconductor field effect transistor with a sunken shallow trench isolation pattern。Thin Solid Films，557。
- 劉傳璽(2014/04)。Effects of extended poly gate on the performance of strained P-type metal-oxide-semiconductor field-effect transistors with a narrow channel width。Thin Solid Films，557。
- 劉傳璽(2014/04)。Mechanical property effects of Si1−xGex channel and stressed contact etching stop layer on nano-scaled n-type metal–oxide–semiconductor field effect transistors。Thin Solid Films，557。
- 劉傳璽(2013/12)。Comparison of NMOSFET and PMOSFET Devices That Combine CESL Stressor and SiGe Channel。Journal of Nanoscience and Nanotechnology，13(12)。
- 劉傳璽(2013/12)。Comparison of NMOSFET and PMOSFET devices that combine CESL stressor and SiGe channel。Journal of Nanoscience and Nanotechnology，13(12)。
- 劉傳璽(2013/10)。Phenomena of N-type Metal-Oxide-Semiconductor-Field-Effect-Transistors with Contact Etch Stop Layer Stressor for Different Channel Lengths。Thin Solid Films，544。
- 劉傳璽(2013/09)。Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories。Microelectronic Engineering，109。
- 劉傳璽(2013/09)。The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy2O3/Si MIS nanolaminated structures。Microelectronic Engineering，109。
- 劉傳璽(2013/07)。Temperature-dependent current conduction of metal-ferroelectric (BiFeO3)-insulator (ZrO2)-Silicon capacitors for nonvolatile memory applications。Thin Solid Films，539。
- 劉傳璽(2012/11)。Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics。Solid-State Electronics，77(11)。
- 劉傳璽(2012/11)。Leakage current conduction behaviors of 0.65 nm equivalent-oxide-thickness HfZrLaO gate dielectrics。Solid-State Electronics，77(11)。
- 劉傳璽(2012/03)。Punch-Through and Junction Breakdown Characteristics for Uniaxial Strained Nano-Node MOSFETs on <100> Wafers。Journal of Nanoelectronics and Optoelectronics，7(3)。
- 劉傳璽(2012/01)。Electron detrapping in thin hafnium silicate and nitrided hafnium silicate gate dielectric stacks。Applied Physics Letters，100(2)。
- 劉傳璽(2012/01)。The effect of lanthanum (La) incorporation in ultra-thin ZrO2 high-k gate dielectrics。Microelectronic Engineering，89(1)。
- 劉傳璽(2012/01)。Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72 nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics。Microelectronic Engineering，89(1)。
- 劉傳璽(2011/07)。Influence of La substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (CeO2)-semiconductor nonvolatile memory structures。Microelectronic Engineering，88(7)。
- 劉傳璽(2011/04)。Temperature dependence of substrate currents of MOSFETs under different drain and gate biases。Journal of the Chinese Institute of Engineers，34(3)。
- 劉傳璽(2011/04)。Degradation mechanism for continuous-wave green laser-crystallized polycrystalline silicon n-channel thin-film transistors under low vertical-field hot-carrier stress with different laser annealing powers。Japanese Journal of Applied Physics，50(4)。
- 劉傳璽(2010/10)。The Influence of Lanthanum Doping Position in Ultra-Thin HfO2 Films for High-k Gate Dielectrics。Thin Solid Films，518(24)。
- 劉傳璽(2010/06)。Promoting of Charged-Device Model/Electrostatic Discharge Immunity in the Dicing Saw Process。Microelectronics Reliability，50(6)。
- 劉傳璽(2010/05)。Substrate Current Verifying Lateral Electrical Field Under Forward Substrate Biases for nMOSFETs。Solid-State Electronics，54(5)。
- 劉傳璽(2010/05)。Electrical Characteristics and Reliability Properties of Metal-Oxide-Semiconductor Capacitors with HfZrLaO Gate Dielectrics。Microelectronics Reliability，50(5)。
- 劉傳璽(2010/05)。Impact of Hf Content on Positive Bias Temperature Instability Reliability of HfSiON Gate Dielectrics。Microelectronics Reliability，50(5)。
- 劉傳璽(2010/04)。Efficiency Improvement of Organic Light Emitting Diodes with Co-Deposited Hole Blocking Layer。Defect and Diffusion Forum，297-301。
- 劉傳璽(2010/04)。Influences of Dye Doping and Hole Blocking Layer Insertion on OLED Performance。Defect and Diffusion Forum，297-301。
- 劉傳璽(2009/07)。Current Conduction of 0.72 nm Equivalent-Oxide-Thickness LaO/HfO2 Stacked Gate Dielectrics。Applied Physics Letters，95(1)。
- 劉傳璽(2009/05)。Electrical Characterization and Dielectric Properties of Metal-Oxide-Semiconductor Structures Using High-k CeZrO4 Ternary Oxide as Gate Dielectric。Japanese Journal of Applied Physics，48(5)。
- 劉傳璽(2009/04)。The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal-Oxide-Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress。Japanese Journal of Applied Physics，48(4)。
- 劉傳璽(2008/07)。Electrical Characterization and Carrier Transportation in Hf-silicate Dielectrics Using ALD Gate Stacks for 90 nm Node MOSFETs。Applied Surface Science，254(19)。
- 劉傳璽(2008/07)。Interface Characterization and Current Conduction in HfO2-gated MOS Capacitors。Applied Surface Science，254(19)。
- 劉傳璽(2008/01)。Hot Carrier Reliability of ALD HfSiON Gated MOSFETs with Different Compositions。The Electrochemical Society Transactions，16(5)。
- 劉傳璽(2007/08)。Physical and Electrical Properties of Ti-Doped Er2O3 Films for High-k Gate Dielectrics。Electrochemical and Solid State Letters，10(8)。
- 劉傳璽(2007/07)。Hot Carrier and Negative-Bias Temperature Instability Reliabilities of Strained-Si MOSFETs。IEEE Transactions on Electron Devices，54(7)。
- 劉傳璽(2007/01)。On the Reverse Short-Channel Effect and Threshold Voltage Roll-Off Controls for 90 nm Node MOSFETs。Journal of the Chinese Institute of Engineers，30(5)。
- 劉傳璽(2007/01)。Electrical Characterization of ZrO2/Si Interface Properties in MOSFETs with ZrO2 Gate Dielectrics。IEEE Electron Device Letters，28(1)。
- 劉傳璽(2005/12)。Mechanism of Dynamic Negative Bias Temperature Instability of p-MOSFETs with 13A Oxynitride Gate Dielectric。Electrochemical and Solid State Letters，8(12)。
- 劉傳璽(2005/11)。Reliability Scaling Limit of 14-A Oxynitride Gate Dielectrics by Different Processing Treatments。Journal of the Electrochemical Society，152(11)。
- 研討會論文
- 劉傳璽(2010/09/22-2010/09/24)。The Influence of La and Zr Doping on TDDB Characteristics of HfO2 Thin Films。International Conference on Solid State Devices and Materials (SSDM)，Japan。
- 劉傳璽(2010/08/22-2010/08/27)。Reliability Characteristics of Metal-Oxide-Semiconductor Capacitors with 0.72 nm Equivalent-Oxide-Thickness LaO/HfO2 Stacked Gate Dielectrics。International Conference on Electronic Materials (IUMRS-ICEM)，Korea。
- 劉傳璽(2010/08/16-2010/08/19)。Performance of Silver-Glue Attachment Technology in Assembly。International Conference on Electronic Packaging Technology & High Density Packaging (ICEPT-HDP)，China。
- 劉傳璽(2010/08/16-2010/08/19)。Efficiency of Dispenser with Nozzle Technology in Assembly。International Conference on Electronic Packaging Technology & High Density Packaging (ICEPT-HDP)，China。
- 劉傳璽(2010/07/11-2010/07/14)。Ameliorated Particle Swarm Optimization by Integrating Taguchi Methods。IEEE International Conference on Machine Learning and Cybernetics (IEEE ICMLC)，China。
- 劉傳璽(2010/01/03-2010/01/08)。Structural Properties of Ultra-Thin Y2O3 Gate Dielectrics Studied by X-Ray Diffraction (XRD) and X-Ray Photoelectron Spectroscopy (XPS)。IEEE International NanaElectronics Conference (IEEE INEC)，Hong Kong。
- 劉傳璽(2010/01/03-2010/01/08)。Depth Profiles and Chemical Bonding States of Graded Doping and Ultra-Thin HfLaO High-k Dielectrics Deposited on Silicon Substrate。IEEE International NanaElectronics Conference (IEEE INEC)，Hong Kong。
- 劉傳璽(2009/12/14-2009/12/16)。Role of Heat Treatment on Structural, Optical, and Electrical Properties of ITO Thin Films。TACT 2009 International Thin Films Conference，Taiwan。
- 劉傳璽(2009/12/14-2009/12/16)。Interfacial and Electrical Properties of Ultra-Thin Y2O3 Gate Insulators。TACT 2009 International Thin Films Conference，Taiwan。
- 劉傳璽(2009/11/19-2009/11/20)。Influence of Doping Position on the Electrical Properties of Ultra-Thin CexSi1-xO2 High-k Dielectric。International Electron Devices and Materials Symposia (IEDMS)，Taiwan。
- 劉傳璽(2009/11/19-2009/11/20)。Comparison of New Transconductance and Charge Pumping Techniques for Hot-carrier Induced Interface-state in HfSiON Gate Dielectrics。International Electron Devices and Materials Symposia (IEDMS)，Taiwan。
- 劉傳璽(2008/11/28-2008/11/29)。NBTI and HC Effects on PMOSFETs Having Different Compositions of HfSiON Gate Dielectrics。International Electron Devices and Materials Symposia (IEDMS)，Taiwan。
- 劉傳璽(2008/10/12-2008/10/17)。Interface Characterization of CeO2-Gated MOSFETs Using Gated Diode Method and Charge Pumping Technique。214th Electrochemical Society (ECS) Meeting，USA。
- 劉傳璽(2008/10/12-2008/10/17)。Hot Carrier Reliability of ALD HfSiON Gated MOSFETs with Different Compositions。214th Electrochemical Society (ECS) Meeting，USA。
- 劉傳璽(2008/09/24-2008/09/26)。Interfacial and Electrical Characterization in MOSFETs with CeO2 Gate Dielectric。International Conference on Solid State Devices and Materials (SSDM)，Japan。
- 劉傳璽(2008/08/23-2008/08/25)。Robots with Object-oriented Peripheral Modules Controlled by a Personal Single Board Computer (PSBC)。IEEE International Conference on Advanced Robotics and its Social Impacts (IEEE ARSO)，Taiwan。
- 劉傳璽(2007/11/30-2007/12/01)。Electrical Properties and Conduction Mechanism in Hf-Silicate Dielectric Using ALD Gate Stacks。International Electron Devices and Materials Symposia (IEDMS)，Taiwan。
- 劉傳璽(2007/11/30-2007/12/01)。Electrical Characterization of Hf-Silicate Dielectric Using ALD Gate Stacks for 90 nm Node MOSFETs。International Electron Devices and Materials Symposia (IEDMS)，Taiwan。
- 學術研究計畫
- 劉傳璽(2020/08/01-2021/07/31)。原住民文化融入國小數理領域之CPS行動學習、評鑑系統與師資培育－原住民國小自然與生活科技課程之CPS行動學習發展與建置―以能源與機器人為例(4/4)。科技部(原國科會)。(MOST 106-2511-S-003 -056 -MY4)。主持人。
- 劉傳璽(2019/08/01-2020/07/31)。原住民文化融入國小數理領域之CPS行動學習、評鑑系統與師資培育－原住民國小自然與生活科技課程之CPS行動學習發展與建置―以能源與機器人為例(3/4)。科技部(原國科會)。(MOST 106-2511-S-003 -056 -MY4)。主持人。
- 劉傳璽(2018/09/01-2019/07/31)。ARCS動機模式融入原住民完全中學之課程開發與推廣(南澳高中)--子計畫三：智慧型機器人課程之技術研發與評鑑(3/3)。科技部(原國科會)。(MOST 107-2514-S-003-003 -)。主持人。
- 劉傳璽(2018/08/01-2019/07/31)。原住民文化融入國小數理領域之CPS行動學習、評鑑系統與師資培育－原住民國小自然與生活科技課程之CPS行動學習發展與建置―以能源與機器人為例(2/4)。科技部(原國科會)。(MOST 106-2511-S-003 -056 -MY4)。主持人。
- 劉傳璽(2017/10/01-2018/08/31)。ARCS動機模式融入原住民完全中學之課程開發與推廣(南澳高中)--子計畫三：智慧型機器人課程之技術研發與評鑑(2/3)。科技部(原國科會)。(MOST 106-2514-S-003-003 -)。主持人。
- 劉傳璽(2017/08/01-2018/07/31)。原住民文化融入國小數理領域之CPS行動學習、評鑑系統與師資培育－原住民國小自然與生活科技課程之CPS行動學習發展與建置―以能源與機器人為例(1/4)。科技部(原國科會)。(MOST 106-2511-S-003 -056 -MY4)。主持人。
- 劉傳璽(2016/11/01-2017/09/30)。ARCS動機模式融入原住民完全中學之課程開發與推廣(南澳高中)--子計畫三：智慧型機器人課程之技術研發與評鑑(1/3)。科技部(原國科會)。(MOST 105-2514-S-003 -004 -)。主持人。
- 劉傳璽(2016/08/01-2017/07/31)。原住民學童CPS空間概念課程與評量之教學平台發展與建置研究－子計畫二：原住民學童數位CPS自然與生活科技課程發展與建置之研究: 以能源為例。科技部(原國科會)。(NSC 102-2511-S-003 -032 -MY4)。主持人。
- 劉傳璽(2015/08/01-2016/07/31)。原住民學童CPS空間概念課程與評量之教學平台發展與建置研究－子計畫二：原住民學童數位CPS自然與生活科技課程發展與建置之研究: 以能源為例。國科會。(NSC 102-2511-S-003 -032 -MY4)。主持人。
- 劉傳璽(2014/08/01-2015/07/31)。原住民學童CPS空間概念課程與評量之教學平台發展與建置研究－子計畫二：原住民學童數位CPS自然與生活科技課程發展與建置之研究: 以能源為例。國科會。(NSC 102-2511-S-003 -032 -MY4)。主持人。
- 劉傳璽(2013/08/01-2014/07/31)。原住民學童CPS空間概念課程與評量之教學平台發展與建置研究－子計畫二：原住民學童數位CPS自然與生活科技課程發展與建置之研究: 以能源為例。國科會。(NSC 102-2511-S-003 -032 -MY4)。主持人。
- 劉傳璽(2012/08/01-2013/07/31)。融合原住民文化與CPS之科學課程發展與評鑑—以能源、機器人為例－融合原民文化與CPS科學課程:原住民國小學童能源課程設計與開發之研究(4/4)。國科會。(NSC101-2511-S-003-002)。主持人。
- 劉傳璽(2011/08/01-2012/07/31)。融合原住民文化與CPS之科學課程發展與評鑑—以能源、機器人為例－融合原民文化與CPS科學課程:原住民國小學童能源課程設計與開發之研究(3/4)。國科會。(NSC100-2511-S-003-002)。主持人。
- 劉傳璽(2010/08/01-2011/07/31)。融合原住民文化與CPS之科學課程發展與評鑑—以能源、機器人為例－融合原民文化與CPS科學課程:原住民國小學童能源課程設計與開發之研究(2/4)。國科會。(NSC99-2511-S-003-002)。主持人。
- 劉傳璽(2009/08/01-2010/07/31)。融合原住民文化與CPS之科學課程發展與評鑑—以能源、機器人為例－融合原民文化與CPS科學課程:原住民國小學童能源課程設計與開發之研究(1/4)。國科會。(NSC98-2511-S-003-014)。主持人。
- 學術專書單篇(章)
- 劉傳璽(2011-9)。High-k 介電層製程 (I): 材料與整合製程。新世代積體電路製程技術。台灣：東華書局。ISBN：978-957-483-671-0。
- 劉傳璽(2011-9)。擴散模組。新世代積體電路製程技術。台灣：東華書局。ISBN：978-957-483-671-0。
- 其他著作
- 劉傳璽(2011-9)。新世代積體電路製程技術(一版一刷)。台灣：東華書局。978-957-483-671-0。
- 劉傳璽(2011-9)。半導體元件物理與製程 理論與實務(三版一刷)。台灣：五南圖書。978-957-11-6374-1。
- 劉傳璽(2008-9)。薄膜電晶體液晶顯示器(初版一刷)。中華民國：新文京開發。978-986-150-944-0。
- 劉傳璽(2008-11)。半導體元件物理與製程(二版三刷)。中華民國：五南圖書。978-957-11-4537-2。
- 劉傳璽(2006-1)。CMOS元件物理與製程整合(初版一刷)。中華民國：五南圖書。957-11-4205-0。
